提高医用控温毯性能，VBsemi MOS管助力医疗领域Improving the Performance of Medical Temperature Control Blankets with VBsemi MOSFETs in the Medical Field医用控温毯在临床治疗中扮演着重要的角色，它能够通过控制设备内循环液体的温度，从而调控人体温度，达到恢复正常体温的目的。与传统物理升降温手段相比，医用控温毯具有更高的控温精度、更加环保、更加安全等优点。然而，国内医用控温产品的发展起步相对较晚，与国外同类型产品相比仍存在一定差距。因此，如何提高医用控温毯的性能，成为当前医疗领域亟需解决的问题。Medical temperature control blankets play an important role in clinical treatment, as they can regulate body temperature by controlling the temperature of the circulating fluid in the device, to restore normal body temperature. Compared with traditional physical heating and cooling methods, medical temperature control blankets have higher temperature control accuracy, are more environmentally friendly, and safer. However, the development of domestic medical temperature control products started relatively late, and there is still a certain gap compared with foreign products of the same type. Therefore, how to improve the performance of medical temperature control blankets has become an urgent problem in the current medical field.在医用控温毯的控制系统中，主控系统电路和驱动电路是两个关键部分。主控系统电路主要由中央处理器、数字隔离器、数字温度传感器、高精度人体温度传感器、数字控制模拟电子开关芯片、线性电流传感器、信号放大器、非接触式读写卡芯片、存储芯片、隔离开关电源、三端稳定器、反向电荷泵芯片、隔离DC-DC电源模块等元件构成，其中各元件的选择和配置都对医用控温毯的性能和稳定性产生着重要影响。In the control system of medical temperature control blankets, the main control system circuit and the drive circuit are two key components. The main control system circuit is mainly composed of a central processor, digital isolator, digital temperature sensor, high-precision human temperature sensor, digital control analog electronic switch chip, linear current sensor, signal amplifier, non-contact read-write card chip, storage chip, isolation switch power supply, three-terminal regulator, reverse charge pump chip, isolation DC-DC power module, and other components. The selection and configuration of each component have an important influence on the performance and stability of medical temperature control blankets.驱动电路部分主要由H桥模块电路和继电器模块电路构成。H桥模块电路主要由H桥驱动电路、滤波电路和其他电路构成，其中H桥驱动电路是整个模块的核心。在H桥驱动电路中，功率MOS管的选择至关重要。台湾VBsemi品牌的VBE1606是一款性能优良的MOS管，具有6.3mΩ极低的导通电阻、Vds=60V、可耐受175℃的运行温度、Id=97A(TC=25℃)等优点，完全可以满足驱动本电路中使用的TEC的需求条件。此外，VBsemi还提供了其他型号的MOS管供用户选择，如VBL1606、VBNCB1603、VBN1603、VBM1606等。The drive circuit mainly consists of an H-bridge module circuit and a relay module circuit. The H-bridge module circuit mainly consists of an H-bridge drive circuit, a filter circuit, and other circuits, in which the H-bridge drive circuit is the core of the entire module. In the H-bridge drive circuit, the selection of power MOSFETs is crucial. The VBE1606 MOSFET from the Taiwanese brand VBsemi is a high-performance MOSFET, with advantages such as a 6.3mΩ low on-resistance, Vds=60V, a maximum operating temperature of 175℃, and Id=97A(TC=25℃), which can fully meet the requirements of the TEC used in the drive circuit. In addition, VBsemi also provides other models of MOSFETs for users to choose from, such as VBL1606, VBNCB1603, VBN1603, VBM1606, and so on.【半导体控温原理图】【Semiconductor temperature control schematic】在医用控温毯的控制系统中，半导体制冷器（Thermo Electric Cooler，TEC）是升降温的核心部件，它是利用帕尔贴效应，通过在半导体组成的PN结两端施加DC电流，将电能转化为热能来发热的。在TEC中，电流从N型半导体到P型半导体时会吸热，在从P型半导体流向N型半导体时放热。电源正负极对调时，冷热端也要对调。【半导体控温原理图】如图所示。In the control system of medical temperature control blankets, the thermoelectric cooler (TEC) is the core component of heating and cooling. It utilizes the Peltier effect to convert electrical energy into heat by applying a DC current to the PN junction composed of semiconductors. In the TEC, heat is absorbed when the current flows from the N-type semiconductor to the P-type semiconductor and released when it flows from the P-type semiconductor to the N-type semiconductor. The polarity of the power supply should be reversed to switch the hot and cold sides.【Semiconductor temperature control schematic】as shown in the figure.【控制系统总体方案结构图】【Overall scheme structure diagram of the control system】控制系统总体方案结构图如图所示。其中，主控系统电路和驱动电路是两个关键部分，它们之间的协调配合是医用控温毯能够正常工作的基础。The overall scheme structure diagram of the control system as shown in the figure. The main control system circuit and the drive circuit are two key components, and their coordinated cooperation is the basis for the normal operation of medical temperature control blankets.【控制输入总体结构图】【Control input overall structure diagram】驱动电路主要由H桥模块电路和继电器模块电路构成。H桥模块电路主要由H桥驱动电路、滤波电路和其他电路构成，其中H桥驱动电路是整个模块的核心。【H桥驱动电路图】如下所示。The drive circuit mainly consists of an H-bridge module circuit and a relay module circuit. The H-bridge module circuit mainly consists of an H-bridge drive circuit, a filter circuit, and other circuits, in which the H-bridge drive circuit is the core of the entire module.【H-bridge drive circuit diagram】is shown below.【H桥驱动电路图】【H-bridge drive circuit diagram】在医用控温毯的控制系统中，各元件之间的协调配合是非常重要的，只有各部分元件之间的配合协调，才能够保证医用控温毯的正常工作。同时，在元件的选择和配置方面，要根据具体的需求和技术要求进行选择，以达到最佳的性能和稳定性。VBsemi品牌的MOS管在医用控温毯的驱动电路中具有重要的作用，它们具有优良的性能和可靠的质量，是医用控温毯控制系统中不可或缺的重要元件。In the control system of medical temperature control blankets, the coordinated cooperation between each component is very important. Only the coordinated cooperation between each component can ensure the normal operation of medical temperature control blankets. At the same time, in the selection and configuration of components, it is necessary to choose according to specific needs and technical requirements to achieve the best performance and stability. The MOSFETs of the VBsemi brand play an important role in the drive circuit of medical temperature control blankets. They have excellent performance and reliable quality, and are an indispensable important component in the control system of medical temperature control blankets.【可供选择的VBsemiMOS管型号图】【Selectable VBsemi MOSFET models】

问题一、如果MOS管的GS端的结电容充电后没有电阻放电，那MOS管会一直开通吗？一般我们设计这个MOS管的驱动电路的时候，这个MOS管的gs端有一个寄生结电容，通常在设计电路时让这个gs端开通后，当关闭时还需要把这个Gs端的电容的电放电，那么使用一个电阻，我们现在有个问题：假如这个我不设计一个放电电阻，这个gs端的结电容是不是一直会存在这个开通电压值？那么这个MOS管是不是会保持一段长时间的开通？问题二、我用一个NPN三级管驱动一颗NMOS 输入是PWM的方波 如图 怎么在MOS管的G极变成了尖波 我用一个NPN三级管驱动一颗NMOS 输入是PWM的方波 如图 怎么在MOS管的G极变成了尖波 输入PWM信号 MOS管G极麻烦看看 难道是应为MOS管的寄生电容引起的 我要怎么改电路才能好点。注：我在风扇的两端并联了一个220uf的大电容 原理图里面没有画上去，已经消除了风扇的感性到mos管d极的已经接近直流了，我现在纳闷的是怎么在mos管g极变成了尖波，理论上应该是方波而现在的现象是高电瓶没有马上高上去好像有个充电过程怎么消除。上期解答：上期解答一、MOS管G端到地是存在一个阻抗的，一般在MΩ级以上，所以放电会很慢，建议还是接个10K左右的电阻。上期解答二、DR111，10K值太大了，改1K波形会好很多产品封装微碧产品拥有SOT23、D F N、SOT-89、SOP-8 、TO-92、TO-251、TO-252、TO-220、TO-220F、TO-263、TO-247、SOT-223、TO3P、TO262、SOT669、TSSOP8、SC70、DIP8、SC75、SOT725等系列封装产品，可满足用户各类需求。应用领域微碧产品广泛应用于汽车领域：电控、电池管理、车载逆变器、车载电子产品、充电桩等；通讯领域：各类电源、交换机等；工业领域：逆变器、变频器、电动工具等；家电领域：风扇、洗衣机、扫地机、冰箱、空调等；消费电子领域：照明灯、医疗设备、无线充、移动电源等，并且产品质量始终保持在行业顶尖水平。